Heralded single-photon source in a III-V photonic crystal

In this Letter we demonstrate heralded single-photon generation in a III-V semiconductor photonic crystal platform through spontaneous four-wave mixing. We achieve a high brightness of 3.4×10(7) pairs·s(-1) nm(-1) W(-1) facilitated through dispersion engineering and the suppression of two-photon abs...

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Veröffentlicht in:	Optics letters 2013-03, Vol.38 (5), p.649-651
Hauptverfasser:	Clark, Alex S, Husko, Chad, Collins, Matthew J, Lehoucq, Gaelle, Xavier, Stéphane, De Rossi, Alfredo, Combrié, Sylvain, Xiong, Chunle, Eggleton, Benjamin J
Format:	Artikel
Sprache:	eng
Schlagworte:	Brightness Dispersions Four-wave mixing Gallium indium phosphide Photonic crystals Photons Platforms Semiconductors
Online-Zugang:	Volltext
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