Heralded single-photon source in a III-V photonic crystal

In this Letter we demonstrate heralded single-photon generation in a III-V semiconductor photonic crystal platform through spontaneous four-wave mixing. We achieve a high brightness of 3.4×10(7) pairs·s(-1) nm(-1) W(-1) facilitated through dispersion engineering and the suppression of two-photon abs...

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Veröffentlicht in:	Optics letters 2013-03, Vol.38 (5), p.649-651
Hauptverfasser:	Clark, Alex S, Husko, Chad, Collins, Matthew J, Lehoucq, Gaelle, Xavier, Stéphane, De Rossi, Alfredo, Combrié, Sylvain, Xiong, Chunle, Eggleton, Benjamin J
Format:	Artikel
Sprache:	eng
Schlagworte:	Brightness Dispersions Four-wave mixing Gallium indium phosphide Photonic crystals Photons Platforms Semiconductors
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Zusammenfassung:	In this Letter we demonstrate heralded single-photon generation in a III-V semiconductor photonic crystal platform through spontaneous four-wave mixing. We achieve a high brightness of 3.4×10(7) pairs·s(-1) nm(-1) W(-1) facilitated through dispersion engineering and the suppression of two-photon absorption in the gallium indium phosphide material. Photon pairs are generated with a coincidence-to-accidental ratio over 60 and a low g(2) (0) of 0.06 proving nonclassical operation in the single photon regime.
ISSN:	0146-9592 1539-4794
DOI:	10.1364/OL.38.000649