Heralded single-photon source in a III-V photonic crystal

In this Letter we demonstrate heralded single-photon generation in a III-V semiconductor photonic crystal platform through spontaneous four-wave mixing. We achieve a high brightness of 3.4×10(7) pairs·s(-1) nm(-1) W(-1) facilitated through dispersion engineering and the suppression of two-photon abs...

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Veröffentlicht in:Optics letters 2013-03, Vol.38 (5), p.649-651
Hauptverfasser: Clark, Alex S, Husko, Chad, Collins, Matthew J, Lehoucq, Gaelle, Xavier, Stéphane, De Rossi, Alfredo, Combrié, Sylvain, Xiong, Chunle, Eggleton, Benjamin J
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container_end_page 651
container_issue 5
container_start_page 649
container_title Optics letters
container_volume 38
creator Clark, Alex S
Husko, Chad
Collins, Matthew J
Lehoucq, Gaelle
Xavier, Stéphane
De Rossi, Alfredo
Combrié, Sylvain
Xiong, Chunle
Eggleton, Benjamin J
description In this Letter we demonstrate heralded single-photon generation in a III-V semiconductor photonic crystal platform through spontaneous four-wave mixing. We achieve a high brightness of 3.4×10(7) pairs·s(-1) nm(-1) W(-1) facilitated through dispersion engineering and the suppression of two-photon absorption in the gallium indium phosphide material. Photon pairs are generated with a coincidence-to-accidental ratio over 60 and a low g(2) (0) of 0.06 proving nonclassical operation in the single photon regime.
doi_str_mv 10.1364/OL.38.000649
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subjects Brightness
Dispersions
Four-wave mixing
Gallium indium phosphide
Photonic crystals
Photons
Platforms
Semiconductors
title Heralded single-photon source in a III-V photonic crystal
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