Processing of c-BN Film from B4C Target Using R.F. Magnetron Sputtering

The cubic boron nitride (c-BN) film has unique physical and chemical properties such as extreme hardness next to diamond, excellent chemical inertness, high thermal conductivity, and thermal stability. In this study, c-BN thin films were processed on WC substrates using B4C targets in R.F. magnetron sputtering system as a function of substrate bias voltage. The morphology and thicknesses of the deposited films were observed. Fourier transform infrared microscopy (FT-IR) were used to analyze the bonding characteristics of c-BN. Intensity of absorption band of FT-IR corresponding to B-C and C-N bond were increased with increasing the substrate bias voltages. Possible mechanisms for the formation of c-BN films were also discussed.