Thermal Noise in MOSFETs: A Two- or a Three-Parameter Noise Model?

In this brief, it is clearly demonstrated that a two-parameter noise model is sufficient to accurately extract the MOSFET high-frequency noise performance, as long as channel uniformity is ensured (which corresponds to mainstream CMOS technology). Nevertheless, in the case of asymmetric channel-base...

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Veröffentlicht in:	IEEE transactions on electron devices 2010-05, Vol.57 (5), p.1188-1191
Hauptverfasser:	Emam, Mostafa, Sakalas, Paulius, Vanhoenacker-Janvier, Danielle, Raskin, Jean-Pierre, Tao Chuan Lim, Danneville, Franois
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Asymmetry Channels CMOS Design. Technologies. Operation analysis. Testing Devices Electronics Exact sciences and technology Graded-channel MOS (GCMOS) Integrated circuit modeling Integrated circuits mainstream MOSFETs Microwave circuits Microwave FET integrated circuits modeling MOSFETs Noise noise correlation coefficient Semiconductor device modeling Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices silicon on insulator (SOI) Thermal noise Transistors Variability
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Beschreibung
Zusammenfassung:	In this brief, it is clearly demonstrated that a two-parameter noise model is sufficient to accurately extract the MOSFET high-frequency noise performance, as long as channel uniformity is ensured (which corresponds to mainstream CMOS technology). Nevertheless, in the case of asymmetric channel-based MOSFETs, it is shown that a three-parameter noise model is required.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2010.2044286