Effect of Metallic Composition on Electrical Properties of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors
We report the combinatorial study on surface morphology and electrical properties of solution-processed amorphous indium-gallium-zinc-oxide ( a - IGZO ) thin-film transistors (TFTs). The sol-gel-processed a - IGZO thin films typically have shown an amorphous structure and critical dependence of mobi...
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| Veröffentlicht in: | IEEE transactions on electron devices 2010-05, Vol.57 (5), p.1009-1014 |
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| container_title | IEEE transactions on electron devices |
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| creator | Kim, Yong-Hoon Han, Min-Koo Han, Jeong-In Park, Sung Kyu |
| description | We report the combinatorial study on surface morphology and electrical properties of solution-processed amorphous indium-gallium-zinc-oxide ( a - IGZO ) thin-film transistors (TFTs). The sol-gel-processed a - IGZO thin films typically have shown an amorphous structure and critical dependence of mobility, carrier concentration, and surface roughness on the In, Ga , and Zn molar ratio in the solution phase. Based on efficient control of the metallic components from the sol-gel process, the solution-processed a - IGZO T FTs with a mobility of 0.5-2 cm 2 /V ·s, on/off current ratio > 10 7 , and a subthreshold slope of as steep as 1.5 V/dec were obtained. |
| doi_str_mv | 10.1109/TED.2010.2043179 |
| format | Article |
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The sol-gel-processed a - IGZO thin films typically have shown an amorphous structure and critical dependence of mobility, carrier concentration, and surface roughness on the In, Ga , and Zn molar ratio in the solution phase. Based on efficient control of the metallic components from the sol-gel process, the solution-processed a - IGZO T FTs with a mobility of 0.5-2 cm 2 /V ·s, on/off current ratio > 10 7 , and a subthreshold slope of as steep as 1.5 V/dec were obtained.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2010.2043179</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>a - IGZO ; Applied sciences ; Combinatorial analysis ; Electrical properties ; Electronics ; Exact sciences and technology ; Gallium ; metallic composition ; Rough surfaces ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. 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(IEEE) May 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c420t-836854cc9e01d28f4626cd2fcb15006b84b73e7c1420291e90112f6324ad4f1e3</citedby><cites>FETCH-LOGICAL-c420t-836854cc9e01d28f4626cd2fcb15006b84b73e7c1420291e90112f6324ad4f1e3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5438779$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27903,27904,54736</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5438779$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=22729702$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, Yong-Hoon</creatorcontrib><creatorcontrib>Han, Min-Koo</creatorcontrib><creatorcontrib>Han, Jeong-In</creatorcontrib><creatorcontrib>Park, Sung Kyu</creatorcontrib><title>Effect of Metallic Composition on Electrical Properties of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>We report the combinatorial study on surface morphology and electrical properties of solution-processed amorphous indium-gallium-zinc-oxide ( a - IGZO ) thin-film transistors (TFTs). The sol-gel-processed a - IGZO thin films typically have shown an amorphous structure and critical dependence of mobility, carrier concentration, and surface roughness on the In, Ga , and Zn molar ratio in the solution phase. Based on efficient control of the metallic components from the sol-gel process, the solution-processed a - IGZO T FTs with a mobility of 0.5-2 cm 2 /V ·s, on/off current ratio > 10 7 , and a subthreshold slope of as steep as 1.5 V/dec were obtained.</description><subject>a - IGZO</subject><subject>Applied sciences</subject><subject>Combinatorial analysis</subject><subject>Electrical properties</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium</subject><subject>metallic composition</subject><subject>Rough surfaces</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>solution-process</subject><subject>Surface morphology</subject><subject>Surface roughness</subject><subject>Thin film transistors</subject><subject>Thin films</subject><subject>thin-film transistor</subject><subject>Transistors</subject><subject>Zinc oxide</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkc2LFDEQxYMoOK7eBS8NInjJmq9Ouo8yzq4Lu6zgePHS9KQrmCXdGVPdoAf_d6uZYQ8LgaKSX70K7zH2VopLKUX7ab_7cqkEdUoYLV37jG1kXTveWmOfs40QsuGtbvRL9grxgVprjNqwf7sQwM9VDtUdzH1K0VfbPB4zxjnmqaKzSwSU6PtUfSv5CGWOgOvA95yWFeJ07QERhupmGuIy8utViOrPOHl-_ycOUO1_xYlfxTRW-9JPGHHOBV-zF6FPCG_O9YL9uNrtt1_57f31zfbzLfdGiZk32ja18b4FIQfVBGOV9YMK_iBrIeyhMQenwXlJtGoltEJKFaxWph9MkKAv2MeT7rHk3wvg3I0RPaTUT5AX7KS2NblVq5rQ90_Qh7yUiX7XSaGcdJK2ECVOlC8ZsUDojiWOfflLULfm0VEe3ZpHd86DRj6chXskLwO54CM-zinlVOvEKv3uxEUAeHyujW4cqfwHQySTHg</recordid><startdate>20100501</startdate><enddate>20100501</enddate><creator>Kim, Yong-Hoon</creator><creator>Han, Min-Koo</creator><creator>Han, Jeong-In</creator><creator>Park, Sung Kyu</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20100501</creationdate><title>Effect of Metallic Composition on Electrical Properties of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors</title><author>Kim, Yong-Hoon ; Han, Min-Koo ; Han, Jeong-In ; Park, Sung Kyu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c420t-836854cc9e01d28f4626cd2fcb15006b84b73e7c1420291e90112f6324ad4f1e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>a - IGZO</topic><topic>Applied sciences</topic><topic>Combinatorial analysis</topic><topic>Electrical properties</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium</topic><topic>metallic composition</topic><topic>Rough surfaces</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>solution-process</topic><topic>Surface morphology</topic><topic>Surface roughness</topic><topic>Thin film transistors</topic><topic>Thin films</topic><topic>thin-film transistor</topic><topic>Transistors</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Yong-Hoon</creatorcontrib><creatorcontrib>Han, Min-Koo</creatorcontrib><creatorcontrib>Han, Jeong-In</creatorcontrib><creatorcontrib>Park, Sung Kyu</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Kim, Yong-Hoon</au><au>Han, Min-Koo</au><au>Han, Jeong-In</au><au>Park, Sung Kyu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Metallic Composition on Electrical Properties of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2010-05-01</date><risdate>2010</risdate><volume>57</volume><issue>5</issue><spage>1009</spage><epage>1014</epage><pages>1009-1014</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>We report the combinatorial study on surface morphology and electrical properties of solution-processed amorphous indium-gallium-zinc-oxide ( a - IGZO ) thin-film transistors (TFTs). The sol-gel-processed a - IGZO thin films typically have shown an amorphous structure and critical dependence of mobility, carrier concentration, and surface roughness on the In, Ga , and Zn molar ratio in the solution phase. Based on efficient control of the metallic components from the sol-gel process, the solution-processed a - IGZO T FTs with a mobility of 0.5-2 cm 2 /V ·s, on/off current ratio > 10 7 , and a subthreshold slope of as steep as 1.5 V/dec were obtained.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2010.2043179</doi><tpages>6</tpages></addata></record> |
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| subjects | a - IGZO Applied sciences Combinatorial analysis Electrical properties Electronics Exact sciences and technology Gallium metallic composition Rough surfaces Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices solution-process Surface morphology Surface roughness Thin film transistors Thin films thin-film transistor Transistors Zinc oxide |
| title | Effect of Metallic Composition on Electrical Properties of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors |
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