Effect of Metallic Composition on Electrical Properties of Solution-Processed Indium-Gallium-Zinc-Oxide Thin-Film Transistors

We report the combinatorial study on surface morphology and electrical properties of solution-processed amorphous indium-gallium-zinc-oxide ( a - IGZO ) thin-film transistors (TFTs). The sol-gel-processed a - IGZO thin films typically have shown an amorphous structure and critical dependence of mobi...

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Veröffentlicht in:	IEEE transactions on electron devices 2010-05, Vol.57 (5), p.1009-1014
Hauptverfasser:	Kim, Yong-Hoon, Han, Min-Koo, Han, Jeong-In, Park, Sung Kyu
Format:	Artikel
Sprache:	eng
Schlagworte:	a - IGZO Applied sciences Combinatorial analysis Electrical properties Electronics Exact sciences and technology Gallium metallic composition Rough surfaces Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices solution-process Surface morphology Surface roughness Thin film transistors Thin films thin-film transistor Transistors Zinc oxide
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Beschreibung
Zusammenfassung:	We report the combinatorial study on surface morphology and electrical properties of solution-processed amorphous indium-gallium-zinc-oxide ( a - IGZO ) thin-film transistors (TFTs). The sol-gel-processed a - IGZO thin films typically have shown an amorphous structure and critical dependence of mobility, carrier concentration, and surface roughness on the In, Ga , and Zn molar ratio in the solution phase. Based on efficient control of the metallic components from the sol-gel process, the solution-processed a - IGZO T FTs with a mobility of 0.5-2 cm 2 /V ·s, on/off current ratio > 10 7 , and a subthreshold slope of as steep as 1.5 V/dec were obtained.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2010.2043179