GaN MSM Photodetectors With a Semi-Insulating Mg-Doped AlInN Cap Layer

We report the fabrication of GaN-based ultraviolet (UV) metal-semiconductor-metal photodetectors with a semi-insulating AlInN cap layer. It was found that we can achieve a smaller dark leakage current, a larger UV-to-visible rejection ratio, a smaller noise level, and a larger detectivity while main...

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Veröffentlicht in:	IEEE photonics technology letters 2009-04, Vol.21 (8), p.504-506
Hauptverfasser:	Weng, W.Y., Chang, S.J., Lai, W.C., Hsueh, T.J., Shei, S.C., Zeng, X.F., Wu, S.L., Hung, S.C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitride Conferences Fabrication Fiber optics Gallium nitride Gallium nitrides Insulation Lattices Leakage current Light emitting diodes Metal-semiconductor-metal (MSM) Noise levels Optical fibers Passivation photodetector Photodetectors Photonic band gap Rejection semi-insulating AlInN cap layer
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Beschreibung
Zusammenfassung:	We report the fabrication of GaN-based ultraviolet (UV) metal-semiconductor-metal photodetectors with a semi-insulating AlInN cap layer. It was found that we can achieve a smaller dark leakage current, a larger UV-to-visible rejection ratio, a smaller noise level, and a larger detectivity while maintaining the sharp transition by inserting the semi-insulating AlInN cap layer.
ISSN:	1041-1135 1941-0174
DOI:	10.1109/LPT.2009.2013968