Interband transitions in gallium sulfide layered single crystals by ellipsometry measurements
Spectroscopic ellipsometry measurements on the GaS single crystals are presented in the energy range of 1.2−6.2eV at room temperature. Optical constants; pseudorefractive index, pseudoextinction coefficient, real and imaginary parts of the pseudodielectric function were determined. Analysis of the s...
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Veröffentlicht in: | Physica. B, Condensed matter Condensed matter, 2013-01, Vol.408, p.43-45 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Spectroscopic ellipsometry measurements on the GaS single crystals are presented in the energy range of 1.2−6.2eV at room temperature. Optical constants; pseudorefractive index, pseudoextinction coefficient, real and imaginary parts of the pseudodielectric function were determined. Analysis of the second derivative of real and imaginary parts of the pseudodielectric constant revealed five transitions with critical point energies of 3.95, 4.22, 4.51, 4.75 and 5.50eV. These energies were assigned to interband transitions according to theoretical study of GaS band structure available in literature. |
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ISSN: | 0921-4526 1873-2135 |
DOI: | 10.1016/j.physb.2012.09.051 |