Effective simulation of the effect of a transverse magnetic field (TMF) in Czochralski Silicon growth

An original numerical technique is used to very efficiently simulate the global heat transfer and 3D melt flow in the Czochralski growth of large silicon crystals under the effect of a transverse magnetic field. Several problems are solved including the simulation of an industrial-size furnace while a comparison is successfully drawn with the literature. The Hartmann and parallel layers located along the crystal and crucible walls are well-captured by our method and show to play a key role in the solution iterative search and to strongly affect the transport of oxygen to the crystal. ► A new numerical technique is developed for CZ silicon growth global simulation. ► This method is applied to transverse magnetic field assisted growth. ► Our approach reduces dramatically the computational time of this 3D problem. ► The crystal and crucible Hartmann and parallel layers are well-captured. ► A comparison is successfully drawn with published results from the literature.