Accelerated VGF-crystal growth of GaAs under traveling magnetic fields
Accelerated VGF-growth of 4in. GaAs ingots by downwards traveling magnetic fields (TMFs) was investigated numerically. The focus was led on the feasibility of control of s/l interface shape by Lorentz forces in the range of crystal growth rates from 3 to 9mm/h. Particularly, the aim of this study wa...
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| creator | Dropka, Natasha Frank-Rotsch, Christiane |
| description | Accelerated VGF-growth of 4in. GaAs ingots by downwards traveling magnetic fields (TMFs) was investigated numerically. The focus was led on the feasibility of control of s/l interface shape by Lorentz forces in the range of crystal growth rates from 3 to 9mm/h. Particularly, the aim of this study was to derive a method for a prediction of electro-magnetic parameters of TMF such as frequency, phase shift and AC amplitude that provide maximal improvement of interface deflection towards convex morphology during the fast growth.
A typical VGF furnace equipped with a KRISTMAG® internal heater-magnet module was used for the simultaneous generation of heat and TMF.
The revealed deflections were correlated with dimensionless numbers: Grashof Gr, Stephan Ste and Forcing number F. With an increase of F while holding Gr and Ste numbers constant, transition through the point of maximal positive deflection was marked by a lift of the stream function vortex from the region of triple point upwards.
► Accelerated VGF-growth of 4in. GaAs ingots by TMF was investigated numerically. ► Focus was led on the feasibility of control of interface shape by Lorentz forces. ► Method was derived for a prediction of electro-magnetic parameters of TMF. ► Study comprised the crystal growth rates in the range from 3 to 9mm/h. |
| doi_str_mv | 10.1016/j.jcrysgro.2013.01.017 |
| format | Article |
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A typical VGF furnace equipped with a KRISTMAG® internal heater-magnet module was used for the simultaneous generation of heat and TMF.
The revealed deflections were correlated with dimensionless numbers: Grashof Gr, Stephan Ste and Forcing number F. With an increase of F while holding Gr and Ste numbers constant, transition through the point of maximal positive deflection was marked by a lift of the stream function vortex from the region of triple point upwards.
► Accelerated VGF-growth of 4in. GaAs ingots by TMF was investigated numerically. ► Focus was led on the feasibility of control of interface shape by Lorentz forces. ► Method was derived for a prediction of electro-magnetic parameters of TMF. ► Study comprised the crystal growth rates in the range from 3 to 9mm/h.</description><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>DOI: 10.1016/j.jcrysgro.2013.01.017</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>A1. Computer simulation ; A1. Fluid flows ; A1. Magnetic fields ; A1. Single crystal growth ; A1. Solidification ; A1. VGF method ; Applied sciences ; Cross-disciplinary physics: materials science; rheology ; Crystal growth ; Deflection ; Electronics ; Exact sciences and technology ; Gallium arsenide ; Gallium arsenides ; Growth from melts; zone melting and refining ; Magnetic fields ; Materials science ; Mathematical models ; Methods of crystal growth; physics of crystal growth ; Morphology ; Optoelectronic devices ; Phase diagrams and microstructures developed by solidification and solid-solid phase transformations ; Phase shift ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Solidification ; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><ispartof>Journal of crystal growth, 2013-03, Vol.367, p.1-7</ispartof><rights>2013 Elsevier B.V.</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c375t-8961c5e18119f04f5d8cb72b36bc7427abd161caafc1384e44e74600a97a1b333</citedby><cites>FETCH-LOGICAL-c375t-8961c5e18119f04f5d8cb72b36bc7427abd161caafc1384e44e74600a97a1b333</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0022024813000560$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65534</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27059007$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Dropka, Natasha</creatorcontrib><creatorcontrib>Frank-Rotsch, Christiane</creatorcontrib><title>Accelerated VGF-crystal growth of GaAs under traveling magnetic fields</title><title>Journal of crystal growth</title><description>Accelerated VGF-growth of 4in. GaAs ingots by downwards traveling magnetic fields (TMFs) was investigated numerically. The focus was led on the feasibility of control of s/l interface shape by Lorentz forces in the range of crystal growth rates from 3 to 9mm/h. Particularly, the aim of this study was to derive a method for a prediction of electro-magnetic parameters of TMF such as frequency, phase shift and AC amplitude that provide maximal improvement of interface deflection towards convex morphology during the fast growth.
A typical VGF furnace equipped with a KRISTMAG® internal heater-magnet module was used for the simultaneous generation of heat and TMF.
The revealed deflections were correlated with dimensionless numbers: Grashof Gr, Stephan Ste and Forcing number F. With an increase of F while holding Gr and Ste numbers constant, transition through the point of maximal positive deflection was marked by a lift of the stream function vortex from the region of triple point upwards.
► Accelerated VGF-growth of 4in. GaAs ingots by TMF was investigated numerically. ► Focus was led on the feasibility of control of interface shape by Lorentz forces. ► Method was derived for a prediction of electro-magnetic parameters of TMF. ► Study comprised the crystal growth rates in the range from 3 to 9mm/h.</description><subject>A1. Computer simulation</subject><subject>A1. Fluid flows</subject><subject>A1. Magnetic fields</subject><subject>A1. Single crystal growth</subject><subject>A1. Solidification</subject><subject>A1. VGF method</subject><subject>Applied sciences</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Crystal growth</subject><subject>Deflection</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Growth from melts; zone melting and refining</subject><subject>Magnetic fields</subject><subject>Materials science</subject><subject>Mathematical models</subject><subject>Methods of crystal growth; physics of crystal growth</subject><subject>Morphology</subject><subject>Optoelectronic devices</subject><subject>Phase diagrams and microstructures developed by solidification and solid-solid phase transformations</subject><subject>Phase shift</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Solidification</subject><subject>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFUE1Lw0AQXUTBWv0LkovgJXEmm2STm6XYKhS8qNdls5nUDWlSd9NK_70bWr0Kw8zlfcx7jN0iRAiYPTRRo-3BrW0fxYA8AvQjztgEc8HDFCA-ZxO_4xDiJL9kV841AJ6JMGGLmdbUklUDVcHHchGOUoNqAy_3PXwGfR0s1cwFu64iGwxW7ak13TrYqHVHg9FBbait3DW7qFXr6OZ0p-x98fQ2fw5Xr8uX-WwVai7SIcyLDHVKmCMWNSR1WuW6FHHJs1KLJBaqrPxbWqlaI88TShISSQagCqGw5JxP2f1Rd2v7rx25QW6M8wFa1VG_cxJ5liKmOYzQ7AjVtnfOUi231myUPUgEORYnG_lbnByLk4B-hCfenTyU06qtreq0cX_sWEBaAIy4xyOOfOC9ISudNtRpqowlPciqN_9Z_QCuTIak</recordid><startdate>20130315</startdate><enddate>20130315</enddate><creator>Dropka, Natasha</creator><creator>Frank-Rotsch, Christiane</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130315</creationdate><title>Accelerated VGF-crystal growth of GaAs under traveling magnetic fields</title><author>Dropka, Natasha ; Frank-Rotsch, Christiane</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c375t-8961c5e18119f04f5d8cb72b36bc7427abd161caafc1384e44e74600a97a1b333</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>A1. Computer simulation</topic><topic>A1. Fluid flows</topic><topic>A1. Magnetic fields</topic><topic>A1. Single crystal growth</topic><topic>A1. Solidification</topic><topic>A1. VGF method</topic><topic>Applied sciences</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Crystal growth</topic><topic>Deflection</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Growth from melts; zone melting and refining</topic><topic>Magnetic fields</topic><topic>Materials science</topic><topic>Mathematical models</topic><topic>Methods of crystal growth; physics of crystal growth</topic><topic>Morphology</topic><topic>Optoelectronic devices</topic><topic>Phase diagrams and microstructures developed by solidification and solid-solid phase transformations</topic><topic>Phase shift</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Solidification</topic><topic>Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Dropka, Natasha</creatorcontrib><creatorcontrib>Frank-Rotsch, Christiane</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of crystal growth</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Dropka, Natasha</au><au>Frank-Rotsch, Christiane</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Accelerated VGF-crystal growth of GaAs under traveling magnetic fields</atitle><jtitle>Journal of crystal growth</jtitle><date>2013-03-15</date><risdate>2013</risdate><volume>367</volume><spage>1</spage><epage>7</epage><pages>1-7</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><abstract>Accelerated VGF-growth of 4in. GaAs ingots by downwards traveling magnetic fields (TMFs) was investigated numerically. The focus was led on the feasibility of control of s/l interface shape by Lorentz forces in the range of crystal growth rates from 3 to 9mm/h. Particularly, the aim of this study was to derive a method for a prediction of electro-magnetic parameters of TMF such as frequency, phase shift and AC amplitude that provide maximal improvement of interface deflection towards convex morphology during the fast growth.
A typical VGF furnace equipped with a KRISTMAG® internal heater-magnet module was used for the simultaneous generation of heat and TMF.
The revealed deflections were correlated with dimensionless numbers: Grashof Gr, Stephan Ste and Forcing number F. With an increase of F while holding Gr and Ste numbers constant, transition through the point of maximal positive deflection was marked by a lift of the stream function vortex from the region of triple point upwards.
► Accelerated VGF-growth of 4in. GaAs ingots by TMF was investigated numerically. ► Focus was led on the feasibility of control of interface shape by Lorentz forces. ► Method was derived for a prediction of electro-magnetic parameters of TMF. ► Study comprised the crystal growth rates in the range from 3 to 9mm/h.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jcrysgro.2013.01.017</doi><tpages>7</tpages></addata></record> |
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| subjects | A1. Computer simulation A1. Fluid flows A1. Magnetic fields A1. Single crystal growth A1. Solidification A1. VGF method Applied sciences Cross-disciplinary physics: materials science rheology Crystal growth Deflection Electronics Exact sciences and technology Gallium arsenide Gallium arsenides Growth from melts zone melting and refining Magnetic fields Materials science Mathematical models Methods of crystal growth physics of crystal growth Morphology Optoelectronic devices Phase diagrams and microstructures developed by solidification and solid-solid phase transformations Phase shift Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solidification Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation |
| title | Accelerated VGF-crystal growth of GaAs under traveling magnetic fields |
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