Accelerated VGF-crystal growth of GaAs under traveling magnetic fields

Accelerated VGF-growth of 4in. GaAs ingots by downwards traveling magnetic fields (TMFs) was investigated numerically. The focus was led on the feasibility of control of s/l interface shape by Lorentz forces in the range of crystal growth rates from 3 to 9mm/h. Particularly, the aim of this study was to derive a method for a prediction of electro-magnetic parameters of TMF such as frequency, phase shift and AC amplitude that provide maximal improvement of interface deflection towards convex morphology during the fast growth. A typical VGF furnace equipped with a KRISTMAG® internal heater-magnet module was used for the simultaneous generation of heat and TMF. The revealed deflections were correlated with dimensionless numbers: Grashof Gr, Stephan Ste and Forcing number F. With an increase of F while holding Gr and Ste numbers constant, transition through the point of maximal positive deflection was marked by a lift of the stream function vortex from the region of triple point upwards. ► Accelerated VGF-growth of 4in. GaAs ingots by TMF was investigated numerically. ► Focus was led on the feasibility of control of interface shape by Lorentz forces. ► Method was derived for a prediction of electro-magnetic parameters of TMF. ► Study comprised the crystal growth rates in the range from 3 to 9mm/h.