Electrolyte-Gated SmCoO3 Thin-Film Transistors Exhibiting Thickness-Dependent Large Switching Ratio at Room Temperature

A Mott transistor that exhibits a large switching ratio of more than two orders at room temperature is demonstrated by using the electric double layer of an ionic liquid for gating on a strongly correlated electron system SmCoO3. From the thickness dependence of the on‐state channel current, we esti...

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Veröffentlicht in:Advanced materials (Weinheim) 2013-04, Vol.25 (15), p.2158-2161
Hauptverfasser: Xiang, Ping-Hua, Asanuma, Shutaro, Yamada, Hiroyuki, Sato, Hiroshi, Inoue, Isao H., Akoh, Hiroshi, Sawa, Akihito, Kawasaki, Masashi, Iwasa, Yoshihiro
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Sprache:eng
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Zusammenfassung:A Mott transistor that exhibits a large switching ratio of more than two orders at room temperature is demonstrated by using the electric double layer of an ionic liquid for gating on a strongly correlated electron system SmCoO3. From the thickness dependence of the on‐state channel current, we estimate the screening length of the SmCoO3 to be ∼5 nm. The good carrier confinement within the Thomas‐Fermi screening length demonstrates that the SmCoO3‐channel electric double layer transistor is the first candidate for a two‐dimensional Mott transistor.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201204505