FEM simulation approach to investigate electro-thermal behavior of power transistors in 3-D

A simulation approach is presented which can be used to investigate electro-thermal behavior of power transistors in variety of operating conditions. The approach is discussed in detail and demonstrated using ANSYS simulator. The power transistor is considered as a distributed voltage controlled res...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Microelectronics and reliability 2013-03, Vol.53 (3), p.356-362
Hauptverfasser:	Košel, V., de Filippis, S., Chen, L., Decker, S., Irace, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Circuits of signal characteristics conditioning (including delay circuits) Computer simulation Electric potential Electric, optical and optoelectronic circuits Electrical engineering. Electrical power engineering Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology Finite element method Mathematical models Other multijunction devices. Power transistors. Thyristors Power electronics, power supplies Power transistors Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices TCP (protocol) Three dimensional Voltage
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Schreiben Sie den ersten Kommentar!