Dimensionality and heat transport in Si-Ge superlattices

We investigated how dimensionality affects heat transport in Si-Ge superlattices (SLs) by computing the thermal conductivity of planar superlattices and arrays of Ge nanowires (NWs) and nanodots embedded in Si. We studied superlattices with ∼10 nm periods using a fully atomistic Monte Carlo solution...

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Veröffentlicht in:Applied physics letters 2013-02, Vol.102 (7)
Hauptverfasser: Savić, Ivana, Donadio, Davide, Gygi, François, Galli, Giulia
Format: Artikel
Sprache:eng
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Zusammenfassung:We investigated how dimensionality affects heat transport in Si-Ge superlattices (SLs) by computing the thermal conductivity of planar superlattices and arrays of Ge nanowires (NWs) and nanodots embedded in Si. We studied superlattices with ∼10 nm periods using a fully atomistic Monte Carlo solution of the Boltzmann transport equation in the relaxation time approximation. We found that for periods larger than 4 nm, the room temperature cross-plane conductivity of planar superlattices with equally thick Si and Ge layers is larger than that of their nanowire and dot counterparts of similar sizes (up to 100%), while the trend is reversed below 4 nm.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4792748