Dimensionality and heat transport in Si-Ge superlattices
We investigated how dimensionality affects heat transport in Si-Ge superlattices (SLs) by computing the thermal conductivity of planar superlattices and arrays of Ge nanowires (NWs) and nanodots embedded in Si. We studied superlattices with ∼10 nm periods using a fully atomistic Monte Carlo solution...
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Veröffentlicht in: | Applied physics letters 2013-02, Vol.102 (7) |
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Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | We investigated how dimensionality affects heat transport in Si-Ge superlattices (SLs) by computing the thermal conductivity of planar superlattices and arrays of Ge nanowires (NWs) and nanodots embedded in Si. We studied superlattices with ∼10 nm periods using a fully atomistic Monte Carlo solution of the Boltzmann transport equation in the relaxation time approximation. We found that for periods larger than 4 nm, the room temperature cross-plane conductivity of planar superlattices with equally thick Si and Ge layers is larger than that of their nanowire and dot counterparts of similar sizes (up to 100%), while the trend is reversed below 4 nm. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4792748 |