Piezo-strain induced non-volatile resistance states in (011)-La2/3Sr1/3MnO3/0.7Pb(Mg2/3Nb1/3)O3-0.3PbTiO3 epitaxial heterostructures

The non-volatile resistance states induced by converse piezoelectric effect are observed in ferromagnetic/ferroelectric epitaxial heterostructures of (011)-La2/3Sr1/3MnO3/0.7Pb(Mg2/3Nb1/3)O3-0.3PbTiO3 (LSMO/PMN0.7PT0.3). Three stable remnant strain states and the corresponding resistance states are...

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Veröffentlicht in:Applied physics letters 2013-01, Vol.102 (3)
Hauptverfasser: Yang, Yuanjun, Luo, Z. L., Meng Yang, Meng, Huang, Haoliang, Wang, Haibo, Bao, J., Pan, Guoqiang, Gao, C., Hao, Qiang, Wang, Shutong, Jokubaitis, Michael, Zhang, Wenzhe, Xiao, Gang, Yao, Yiping, Liu, Yukuai, Li, X. G.
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Sprache:eng
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Zusammenfassung:The non-volatile resistance states induced by converse piezoelectric effect are observed in ferromagnetic/ferroelectric epitaxial heterostructures of (011)-La2/3Sr1/3MnO3/0.7Pb(Mg2/3Nb1/3)O3-0.3PbTiO3 (LSMO/PMN0.7PT0.3). Three stable remnant strain states and the corresponding resistance states are achieved by properly reversing the electric field from the depolarized direction in ferroelectric PMN0.7PT0.3 substrate. The non-volatile resistance states of the LSMO film can be manipulated by applied electric-field pulse sequence as a result of the large coupling between the electronic states of LSMO film and the strain transferred from the ferroelectric substrate. The electrically tunable, non-volatile resistance states observed exhibit potential for applications in low-power-consumption electronic devices.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4788723