Structure of epitaxial L10-FePt/MgO perpendicular magnetic tunnel junctions

Perpendicular magnetic tunnel junctions (p-MTJs) with MgO barriers are interesting for high-density information-storage devices. Chemically ordered L10-FePt is a potential electrode due to its large perpendicular magnetocrystalline anisotropy. To-date, a single theoretical study on L10-FePt/MgO p-MT...

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Veröffentlicht in:Applied physics letters 2013-02, Vol.102 (6)
Hauptverfasser: Kohn, Amit, Tal, Nadav, Elkayam, Ayala, Kovacs, Andras, Li, Dalai, Wang, Shouguo, Ghannadzadeh, Saman, Hesjedal, Thorsten, Ward, Roger CC
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Sprache:eng
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Zusammenfassung:Perpendicular magnetic tunnel junctions (p-MTJs) with MgO barriers are interesting for high-density information-storage devices. Chemically ordered L10-FePt is a potential electrode due to its large perpendicular magnetocrystalline anisotropy. To-date, a single theoretical study on L10-FePt/MgO p-MTJ based on an idealized structure reported significant dependence of spin-dependent tunneling on interface structure. [Y. Taniguchi , IEEE Trans. Magn. 44, 2585 (2008).] We report a structural study of epitaxial L10-FePt(001)[110]//MgO(001)[110]//L10-FePt(001)[110] p-MTJs, focusing on the interfaces using aberration-corrected scanning transmission electron microscopy. Interfaces are semi-coherent, with oxygen atomic-columns of MgO located opposite to iron atomic-columns in L10-FePt. Up to three lattice planes show atomic-column steps, the origin of which is attributed to antiphase boundaries in L10-FePt.
ISSN:0003-6951
DOI:10.1063/1.4791576