Modulation of NiGe/Ge Schottky barrier height by S and P co-introduction
The profiles and current-voltage characteristics of phosphorus (P)- and/or sulfur (S)-introduced Ge and NiGe/Ge have been investigated to clarify the mechanism of Schottky barrier height (SBH) modulation. For NiGe/nGe (NiGe/pGe), the introduction of P and the co-introduction of P and S effectively r...
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Veröffentlicht in: | Applied physics letters 2013-01, Vol.102 (3) |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The profiles and current-voltage characteristics of phosphorus (P)- and/or sulfur (S)-introduced Ge and NiGe/Ge have been investigated to clarify the mechanism of Schottky barrier height (SBH) modulation. For NiGe/nGe (NiGe/pGe), the introduction of P and the co-introduction of P and S effectively reduced (increased) SBH, which is explained by the properties of S acting as an n-type dopant with deep donor levels in Ge. In modulating the SBH, the co-introduction was the most effective. It is probably related to the fact that a higher increase in electron concentrations was observed in S and P co-introduced Ge than in P-introduced Ge. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4789437 |