Wavelength selective p-GaN/ZnO colloidal nanoparticle heterojunction photodiode
An ultraviolet heterojunction photodiode consisting of epitaxially grown p-GaN layers and polyvinyl alcohol coated ZnO colloidal nanoparticles exhibits a lowpass and bandpass alternative property depending on the illumination direction. At 0 V bias, a time response on the order of 10 s of millisecon...
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Veröffentlicht in: | Applied physics letters 2013-02, Vol.102 (7) |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | An ultraviolet heterojunction photodiode consisting of epitaxially grown p-GaN layers and polyvinyl alcohol coated ZnO colloidal nanoparticles exhibits a lowpass and bandpass alternative property depending on the illumination direction. At 0 V bias, a time response on the order of 10 s of milliseconds was demonstrated with a responsivity on the order of mA/W with about 100 nW of ultraviolet illumination. The rectification ratio at ±5 V was 1000 under dark environment. Deposition of colloidal ZnO nanoparticles on an independent p-GaN substrate introduces a technique to create a heterostructure pn junction photodiode with wavelength selection by back illumination. |
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ISSN: | 0003-6951 1077-3118 |
DOI: | 10.1063/1.4793210 |