Terahertz emission from GaAs-AlGaAs core-shell nanowires on Si (100) substrate: Effects of applied magnetic field and excitation wavelength

Terahertz emission from GaAs-AlGaAs core-shell nanowires on Si (100) substrate: Effects of applied magnetic field and excitation wavelength

Terahertz (THz) emission from GaAs-AlGaAs core-shell nanowires (CSNW) on silicon (100) substrates was investigated using THz time-domain spectroscopy. The applied magnetic field polarity dependence strongly suggests that THz emission originated from photo-carriers in the CSNWs. Optical excitation of...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics letters 2013-02, Vol.102 (6)
Hauptverfasser: John Ibanes, Jasher, Herminia Balgos, Ma, Jaculbia, Rafael, Salvador, Arnel, Somintac, Armando, Estacio, Elmer, Que, Christopher T., Tsuzuki, Satoshi, Yamamoto, Kohji, Tani, Masahiko
Format: Artikel
Sprache:eng
Schlagworte:
Aluminum gallium arsenides
Emission analysis
Emission spectroscopy
Excitation
Gallium arsenide
Magnetic fields
Nanowires
Silicon substrates
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Terahertz (THz) emission from GaAs-AlGaAs core-shell nanowires (CSNW) on silicon (100) substrates was investigated using THz time-domain spectroscopy. The applied magnetic field polarity dependence strongly suggests that THz emission originated from photo-carriers in the CSNWs. Optical excitation of the GaAs-AlGaAs core-shell yielded a wider THz emission bandwidth compared with that of just the GaAs core material. This result is currently attributed to faster carrier lifetimes in the AlGaAs shell. The THz emission spectral data are supported by time-resolved photoluminescence studies.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4791570