Broadband near-infrared emission of chromium-doped sulfide glass-ceramics containing Ga2S3 nanocrystals

Upon 808 nm excitation, an intense broadband near-infrared emission from Cr4+ has been observed in 80GeS2-20Ga2S3 chalcogenide glass-ceramics (GCs) containing Ga2S3 nanocrystals. The emission band peaking at 1250 nm covers the O, E, S bands (1000-1500 nm). The formation of Ga2S3 nanocrystals (∼20 n...

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Veröffentlicht in:	Optics letters 2012-12, Vol.37 (24), p.5043-5045
Hauptverfasser:	Ren, Jing, Li, Bo, Yang, Guang, Xu, Weina, Zhang, Zhihuan, Secu, Mihail, Bercu, Vasile, Zeng, Huidan, Chen, Guorong
Format:	Artikel
Sprache:	eng
Schlagworte:	Bands Broadband Chalcogenides Emission Glass ceramics Nanocrystals Quantum efficiency Sulfides
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Zusammenfassung:	Upon 808 nm excitation, an intense broadband near-infrared emission from Cr4+ has been observed in 80GeS2-20Ga2S3 chalcogenide glass-ceramics (GCs) containing Ga2S3 nanocrystals. The emission band peaking at 1250 nm covers the O, E, S bands (1000-1500 nm). The formation of Ga2S3 nanocrystals (∼20 nm) increases the emission intensity of Cr4+ by more than three times. The quantum efficiency of the present GCs is as great as 36% at room temperature.
ISSN:	0146-9592 1539-4794
DOI:	10.1364/OL.37.005043