Structural and transport properties of epitaxial PrNiO3 thin films grown by molecular beam epitaxy

Epitaxial single crystal films of praseodymium nickelate (PrNiO3) have been grown by molecular beam epitaxy on LaAlO3(001) substrates. In-situ electron diffraction and ex-situ X-ray diffraction techniques confirm an epitaxial relationship to the underlying substrate. Crystalline quality depends stro...

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Veröffentlicht in:	Journal of crystal growth 2013-03, Vol.366, p.51-54
Hauptverfasser:	Feigl, L., Schultz, B.D., Ohya, S., Ouellette, D.G., Kozhanov, A., Palmstrøm, C.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	A3. Molecular beam epitaxy B1. Perovskites B1. Rare earth nickelates B2. Metal–insulator transition Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Crystal growth Crystal structure Diffraction Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Epitaxial growth Exact sciences and technology Flux Fluxes Materials science Methods of deposition of films and coatings film growth and epitaxy Molecular beam epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Thin films
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Zusammenfassung:	Epitaxial single crystal films of praseodymium nickelate (PrNiO3) have been grown by molecular beam epitaxy on LaAlO3(001) substrates. In-situ electron diffraction and ex-situ X-ray diffraction techniques confirm an epitaxial relationship to the underlying substrate. Crystalline quality depends strongly on the substrate temperature and activated oxygen flux during growth with the highest quality films formed at 600°C under high oxygen plasma fluxes. The metal–insulator transition for PrNiO3 films was suppressed as the crystalline quality of the layers was improved. ► Epitaxial single crystal films of PrNiO3 were grown by MBE on LaAlO3(001) substrates. ► Crystal quality depends strongly on substrate temperature and activated oxygen flux. ► Metal–insulator transition for PrNiO3 was suppressed as crystalline quality improved.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2012.12.018