Unipolar resistive switching behavior of Pt/LixZn1-xO/Pt resistive random access memory devices controlled by various defect types

The unipolar resistive switching behavior of Pt/LixZn1-xO/Pt structures fabricated via radio-frequency magnetron sputtering is investigated. Various Li doping concentrations influence the defect types (i.e., VO, Lii, and LiZn) in LixZn1-xO films for adjustable resistance ratio. The resistance ratio...

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Veröffentlicht in:	Applied physics letters 2012-11, Vol.101 (20)
Hauptverfasser:	Lin, Cheng, Tseng, Liang, Lo, Yao, Huang, Yu, Hong, Shong, Chu, Yuan, Chang, Chiang, Wu, Jyi
Format:	Artikel
Sprache:	eng ; jpn
Schlagworte:	Adjustable Defects Dopants Emission Leakage current Platinum Random access memory Switching
Online-Zugang:	Volltext
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