Unipolar resistive switching behavior of Pt/LixZn1-xO/Pt resistive random access memory devices controlled by various defect types

Unipolar resistive switching behavior of Pt/LixZn1-xO/Pt resistive random access memory devices controlled by various defect types

The unipolar resistive switching behavior of Pt/LixZn1-xO/Pt structures fabricated via radio-frequency magnetron sputtering is investigated. Various Li doping concentrations influence the defect types (i.e., VO, Lii, and LiZn) in LixZn1-xO films for adjustable resistance ratio. The resistance ratio...

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Veröffentlicht in:Applied physics letters 2012-11, Vol.101 (20)
Hauptverfasser: Lin, Cheng, Tseng, Liang, Lo, Yao, Huang, Yu, Hong, Shong, Chu, Yuan, Chang, Chiang, Wu, Jyi
Format: Artikel
Sprache:eng ; jpn
Schlagworte:
Adjustable
Defects
Dopants
Emission
Leakage current
Platinum
Random access memory
Switching
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Zusammenfassung:The unipolar resistive switching behavior of Pt/LixZn1-xO/Pt structures fabricated via radio-frequency magnetron sputtering is investigated. Various Li doping concentrations influence the defect types (i.e., VO, Lii, and LiZn) in LixZn1-xO films for adjustable resistance ratio. The resistance ratio reaches 108 due to the minimized leakage current in the high-resistance state (HRS) at 6 at. % Li dopants. The dominant conduction mechanisms are explained in terms of Ohmic behavior and Poole-Frenkel (PF) emission. The coefficient r of the PF emission in the HRS is evaluated to confirm that the total number of defects in LixZn1-xO films decreases with increasing Li content.
ISSN:0003-6951
DOI:10.1063/1.4766725