Infrared detectors based on semiconductor p-n junction of PbSe

P-n junctions based on physical vapor deposition of thin PbSe films and conductivity type inversion from n- to p-type are developed and characterized over a wide range of temperatures and bias voltages. Photosensitivity and diode characteristics in the thin film PbSe diode structures were found at temperatures up to 300 K. The values of the measured and estimated parameters of these structures demonstrate their high photodetector performance and the potential for development of IR detectors with optimal sensitivity at the highest possible operating temperature.