Valence band offset of n-ZnO/p-MgxNi1-xO heterojunction measured by x-ray photoelectron spectroscopy
The valence band offset (VBO) of a n-ZnO/p-MgxNi1-xO heterojunction grown by pulsed laser deposition was investigated by x-ray photoelectron spectroscopy. From the directly measured VBO of 1.64 plus or minus 0.05 eV, a -2.26 plus or minus 0.05 eV conduction band offset was derived. This indicates th...
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Veröffentlicht in: | Applied physics letters 2012-07, Vol.101 (5) |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng ; jpn |
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Zusammenfassung: | The valence band offset (VBO) of a n-ZnO/p-MgxNi1-xO heterojunction grown by pulsed laser deposition was investigated by x-ray photoelectron spectroscopy. From the directly measured VBO of 1.64 plus or minus 0.05 eV, a -2.26 plus or minus 0.05 eV conduction band offset was derived. This indicates that the ZnO/MgxNi1-xO heterojunction has a type-II (staggered) band alignment. The conduction band minimum (CBM) of the n-ZnO/p-MgxNi1-xO heterojunction shifts to higher energy with Mg doping relative to the n-ZnO/p-NiO heterojunction. Thus, the position of the CBM can be controlled by the Mg concentration. |
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ISSN: | 0003-6951 |
DOI: | 10.1063/1.4742172 |