Valence band offset of n-ZnO/p-MgxNi1-xO heterojunction measured by x-ray photoelectron spectroscopy

The valence band offset (VBO) of a n-ZnO/p-MgxNi1-xO heterojunction grown by pulsed laser deposition was investigated by x-ray photoelectron spectroscopy. From the directly measured VBO of 1.64 plus or minus 0.05 eV, a -2.26 plus or minus 0.05 eV conduction band offset was derived. This indicates th...

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Veröffentlicht in:Applied physics letters 2012-07, Vol.101 (5)
Hauptverfasser: Guo, Y M, Zhu, L P, Jiang, J, Hu, L, Ye, C L, Ye, Z Z
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Sprache:eng ; jpn
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Zusammenfassung:The valence band offset (VBO) of a n-ZnO/p-MgxNi1-xO heterojunction grown by pulsed laser deposition was investigated by x-ray photoelectron spectroscopy. From the directly measured VBO of 1.64 plus or minus 0.05 eV, a -2.26 plus or minus 0.05 eV conduction band offset was derived. This indicates that the ZnO/MgxNi1-xO heterojunction has a type-II (staggered) band alignment. The conduction band minimum (CBM) of the n-ZnO/p-MgxNi1-xO heterojunction shifts to higher energy with Mg doping relative to the n-ZnO/p-NiO heterojunction. Thus, the position of the CBM can be controlled by the Mg concentration.
ISSN:0003-6951
DOI:10.1063/1.4742172