Simulation of N-face InGaN-based p-i-n solar cells

GaN/InGaN p-i-n solar cells with N-face are simulated. In contrast to the detrimental effect of normal polarization, the internal electric field induced by reversed polarization enhances the efficiency of carrier collection by enlarging the energy band tilting to the favorable direction in the InGaN...

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Veröffentlicht in:	Journal of applied physics 2012-08, Vol.112 (3)
Hauptverfasser:	Chang, Jih-Yuan, Kuo, Yen-Kuang
Format:	Artikel
Sprache:	eng
Schlagworte:	Energy bands Gallium nitrides Indium Indium gallium nitrides Photovoltaic cells Polarization Simulation Solar cells
Online-Zugang:	Volltext
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