Simulation of N-face InGaN-based p-i-n solar cells

GaN/InGaN p-i-n solar cells with N-face are simulated. In contrast to the detrimental effect of normal polarization, the internal electric field induced by reversed polarization enhances the efficiency of carrier collection by enlarging the energy band tilting to the favorable direction in the InGaN absorption layer. This beneficial effect becomes more remarkable when the indium composition of the InGaN absorption layer is higher.