Energy harvesting in semiconductor-insulator-semiconductor junctions through excitation of surface plasmon polaritons

We have demonstrated a simple approach for developing a photovoltaic device consisting of semiconductor-insulator-semiconductor (SIS) heterojunction using surface plasmon polaritons (SPPs) generated in one of the semiconductors (Al:ZnO) and propagated through the dielectric barrier (SiO 2 ) to other...

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Veröffentlicht in:Applied physics letters 2012-02, Vol.100 (6), p.061127-061127-3
Hauptverfasser: Pradhan, A. K., Holloway, Terence, Mundle, Rajeh, Dondapati, Hareesh, Bahoura, M.
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Sprache:eng
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Zusammenfassung:We have demonstrated a simple approach for developing a photovoltaic device consisting of semiconductor-insulator-semiconductor (SIS) heterojunction using surface plasmon polaritons (SPPs) generated in one of the semiconductors (Al:ZnO) and propagated through the dielectric barrier (SiO 2 ) to other (Si). This robust architecture based on surface plasmon excitation within an SIS device that produces power based on spatial confinement of electron excitation through plasmon absorption in Al:ZnO in a broad spectrum of visible to infrared wavelengths enhancing the photovoltaic activities. This finding suggests a range of applications for photovoltaics, sensing, waveguides, and others using SPPs enhancement on semiconductors without using noble metals.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3684833