Temperature dependence of reversible switch-memory in electron field emission from ultrananocrystalline diamond

Temperature dependence of reversible hysteretic switching in electron field emission from surface transfer doped ultrananocrystalline diamond (UNCD) thin films is reported. Sharp jumps (up to 3 orders of magnitude) of the current, at specific ramp up and down extracting electric field values, are fo...

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Veröffentlicht in:Applied physics letters 2012-10, Vol.101 (17)
Hauptverfasser: Tordjman, M., Bolker, A., Saguy, C., Kalish, R.
Format: Artikel
Sprache:eng
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Zusammenfassung:Temperature dependence of reversible hysteretic switching in electron field emission from surface transfer doped ultrananocrystalline diamond (UNCD) thin films is reported. Sharp jumps (up to 3 orders of magnitude) of the current, at specific ramp up and down extracting electric field values, are found. The memory-window, i.e., hysteresis widths, of the emitted current is controllable by heating (50 °C to 250 °C). The temperature dependence of the hysteresis is explained as being due to conductivity properties of the transfer doped UNCD film namely, by the electrons supply to emission sites. These results may find application in memory-switch devices with tunable properties.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.4764907