Removal of amorphous C and Sn on Mo:Si multilayer mirror surface in Hydrogen plasma and afterglow
Removal of amorphous carbon and tin films from a Mo:Si multilayer mirror surface in a hydrogen plasma and its afterglow is investigated. In the afterglow, the mechanism of Sn and C films removal is solely driven by hydrogen atoms (radicals). Probabilities of Sn and C atoms removal by H atoms were me...
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| Veröffentlicht in: | Journal of applied physics 2012-05, Vol.111 (9), p.093304-093304-4 |
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| container_end_page | 093304-4 |
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| container_issue | 9 |
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| container_title | Journal of applied physics |
| container_volume | 111 |
| creator | Braginsky, O. V. Kovalev, A. S. Lopaev, D. V. Malykhin, E. M. Rakhimova, T. V. Rakhimov, A. T. Vasilieva, A. N. Zyryanov, S. M. Koshelev, K. N. Krivtsun, V. M. van Kaampen, Maarten Glushkov, D. |
| description | Removal of amorphous carbon and tin films from a Mo:Si multilayer mirror surface in a hydrogen plasma and its afterglow is investigated. In the afterglow, the mechanism of Sn and C films removal is solely driven by hydrogen atoms (radicals). Probabilities of Sn and C atoms removal by H atoms were measured. It was shown that the radical mechanism is also dominant for Sn atoms removal in the hydrogen plasma because of the low ion energy and flux. Unlike for Sn, the removal mechanism for C atoms in the plasma is ion-stimulated and provides a much higher removal rate. |
| doi_str_mv | 10.1063/1.4709408 |
| format | Article |
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V. ; Kovalev, A. S. ; Lopaev, D. V. ; Malykhin, E. M. ; Rakhimova, T. V. ; Rakhimov, A. T. ; Vasilieva, A. N. ; Zyryanov, S. M. ; Koshelev, K. N. ; Krivtsun, V. M. ; van Kaampen, Maarten ; Glushkov, D.</creator><creatorcontrib>Braginsky, O. V. ; Kovalev, A. S. ; Lopaev, D. V. ; Malykhin, E. M. ; Rakhimova, T. V. ; Rakhimov, A. T. ; Vasilieva, A. N. ; Zyryanov, S. M. ; Koshelev, K. N. ; Krivtsun, V. M. ; van Kaampen, Maarten ; Glushkov, D.</creatorcontrib><description>Removal of amorphous carbon and tin films from a Mo:Si multilayer mirror surface in a hydrogen plasma and its afterglow is investigated. In the afterglow, the mechanism of Sn and C films removal is solely driven by hydrogen atoms (radicals). Probabilities of Sn and C atoms removal by H atoms were measured. It was shown that the radical mechanism is also dominant for Sn atoms removal in the hydrogen plasma because of the low ion energy and flux. 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Probabilities of Sn and C atoms removal by H atoms were measured. It was shown that the radical mechanism is also dominant for Sn atoms removal in the hydrogen plasma because of the low ion energy and flux. Unlike for Sn, the removal mechanism for C atoms in the plasma is ion-stimulated and provides a much higher removal rate.</description><subject>Afterglows</subject><subject>Carbon</subject><subject>Flux</subject><subject>Hydrogen atoms</subject><subject>Hydrogen plasma</subject><subject>Multilayers</subject><subject>Radicals</subject><subject>Tin</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNp1kD1PwzAURS0EEqUw8A88wpDiZydxwoCEKr6kIiQKs_WS2sXIiYOdgPrvCbRiY3rLuffpHkJOgc2A5eICZqlkZcqKPTIBVpSJzDK2TyaMcUiKUpaH5CjGd8YAClFOCD7rxn-io95QbHzo3vwQ6Zxiu6LLlvqWPvrLpaXN4HrrcKMDbWwIPtA4BIO1pral95tV8Gvd0s5hbPA3jKbXYe381zE5MOiiPtndKXm9vXmZ3yeLp7uH-fUiqQXIPkFZ5ZXhHDEXFTe6MGVtmJArSBlk46c0ZTLLRa45h1xWrMxEmhW5lGOqqEFMydm2twv-Y9CxV42NtXYOWz1uUiC44ADj8hE936J18DEGbVQXbINho4CpH40K1E7jyF5t2VjbHnvr2__hnUvljfpzKb4BibF5gA</recordid><startdate>20120501</startdate><enddate>20120501</enddate><creator>Braginsky, O. 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N.</creatorcontrib><creatorcontrib>Krivtsun, V. M.</creatorcontrib><creatorcontrib>van Kaampen, Maarten</creatorcontrib><creatorcontrib>Glushkov, D.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Braginsky, O. V.</au><au>Kovalev, A. S.</au><au>Lopaev, D. V.</au><au>Malykhin, E. M.</au><au>Rakhimova, T. V.</au><au>Rakhimov, A. T.</au><au>Vasilieva, A. N.</au><au>Zyryanov, S. M.</au><au>Koshelev, K. N.</au><au>Krivtsun, V. M.</au><au>van Kaampen, Maarten</au><au>Glushkov, D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Removal of amorphous C and Sn on Mo:Si multilayer mirror surface in Hydrogen plasma and afterglow</atitle><jtitle>Journal of applied physics</jtitle><date>2012-05-01</date><risdate>2012</risdate><volume>111</volume><issue>9</issue><spage>093304</spage><epage>093304-4</epage><pages>093304-093304-4</pages><issn>0021-8979</issn><eissn>1089-7550</eissn><coden>JAPIAU</coden><abstract>Removal of amorphous carbon and tin films from a Mo:Si multilayer mirror surface in a hydrogen plasma and its afterglow is investigated. In the afterglow, the mechanism of Sn and C films removal is solely driven by hydrogen atoms (radicals). Probabilities of Sn and C atoms removal by H atoms were measured. It was shown that the radical mechanism is also dominant for Sn atoms removal in the hydrogen plasma because of the low ion energy and flux. Unlike for Sn, the removal mechanism for C atoms in the plasma is ion-stimulated and provides a much higher removal rate.</abstract><pub>American Institute of Physics</pub><doi>10.1063/1.4709408</doi></addata></record> |
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| ispartof | Journal of applied physics, 2012-05, Vol.111 (9), p.093304-093304-4 |
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| language | eng |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | Afterglows Carbon Flux Hydrogen atoms Hydrogen plasma Multilayers Radicals Tin |
| title | Removal of amorphous C and Sn on Mo:Si multilayer mirror surface in Hydrogen plasma and afterglow |
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