Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent Cu-O alloying
The electronic band structure and p-type conductivity of CuAlO2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu+ 3d10 with Cu2+ 3d9 orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO2 host. The Cu-O/CuAlO2 al...
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| Veröffentlicht in: | Applied physics letters 2012-02, Vol.100 (6) |
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| container_title | Applied physics letters |
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| creator | Yao, Z. Q. He, B. Zhang, L. Zhuang, C. Q. Ng, T. W. Liu, S. L. Vogel, M. Kumar, A. Zhang, W. J. Lee, C. S. Lee, S. T. Jiang, X. |
| description | The electronic band structure and p-type conductivity of CuAlO2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu+ 3d10 with Cu2+ 3d9 orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO2 host. The Cu-O/CuAlO2 alloying films show excellent electronic properties with tunable wide direct bandgaps (∼3.46–3.87 eV); Hall measurements verify the highest hole mobilities (∼11.3–39.5 cm2/Vs) achieved thus far for CuAlO2 thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO2 films were presented, and the devices showed pronounced performance with Ion/Ioff of ∼8.0 × 102 and field effect mobility of 0.97 cm2/Vs. |
| doi_str_mv | 10.1063/1.3683499 |
| format | Article |
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Q. ; He, B. ; Zhang, L. ; Zhuang, C. Q. ; Ng, T. W. ; Liu, S. L. ; Vogel, M. ; Kumar, A. ; Zhang, W. J. ; Lee, C. S. ; Lee, S. T. ; Jiang, X.</creator><creatorcontrib>Yao, Z. Q. ; He, B. ; Zhang, L. ; Zhuang, C. Q. ; Ng, T. W. ; Liu, S. L. ; Vogel, M. ; Kumar, A. ; Zhang, W. J. ; Lee, C. S. ; Lee, S. T. ; Jiang, X.</creatorcontrib><description>The electronic band structure and p-type conductivity of CuAlO2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu+ 3d10 with Cu2+ 3d9 orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO2 host. The Cu-O/CuAlO2 alloying films show excellent electronic properties with tunable wide direct bandgaps (∼3.46–3.87 eV); Hall measurements verify the highest hole mobilities (∼11.3–39.5 cm2/Vs) achieved thus far for CuAlO2 thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO2 films were presented, and the devices showed pronounced performance with Ion/Ioff of ∼8.0 × 102 and field effect mobility of 0.97 cm2/Vs.</description><identifier>ISSN: 0003-6951</identifier><identifier>EISSN: 1077-3118</identifier><identifier>DOI: 10.1063/1.3683499</identifier><language>eng</language><subject>ALLOYING ; Alloying effects ; COPPER ALLOYS (40 TO 99.3 CU) ; Copper base alloys ; Devices ; ELECTRICAL CONDUCTIVITY ; ELECTRONIC PRODUCTS ; Electronics ; Energy bands ; ENGINES ; Orbitals ; THIN FILMS ; VALENCE</subject><ispartof>Applied physics letters, 2012-02, Vol.100 (6)</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c258t-fd7e74d366e4c624669c80fc7319a05e2f0608b658d5c063bb4bbe68290691873</citedby><cites>FETCH-LOGICAL-c258t-fd7e74d366e4c624669c80fc7319a05e2f0608b658d5c063bb4bbe68290691873</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>315,782,786,27931,27932</link.rule.ids></links><search><creatorcontrib>Yao, Z. 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The Cu-O/CuAlO2 alloying films show excellent electronic properties with tunable wide direct bandgaps (∼3.46–3.87 eV); Hall measurements verify the highest hole mobilities (∼11.3–39.5 cm2/Vs) achieved thus far for CuAlO2 thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO2 films were presented, and the devices showed pronounced performance with Ion/Ioff of ∼8.0 × 102 and field effect mobility of 0.97 cm2/Vs.</description><subject>ALLOYING</subject><subject>Alloying effects</subject><subject>COPPER ALLOYS (40 TO 99.3 CU)</subject><subject>Copper base alloys</subject><subject>Devices</subject><subject>ELECTRICAL CONDUCTIVITY</subject><subject>ELECTRONIC PRODUCTS</subject><subject>Electronics</subject><subject>Energy bands</subject><subject>ENGINES</subject><subject>Orbitals</subject><subject>THIN FILMS</subject><subject>VALENCE</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNotkEtLxDAUhYMoOI4u_AdZ6iJjHm2aLodhfMDAbHRd2vR2jKRJTdKB_ntbnNXlXD4OnA-hR0Y3jErxwjZCKpGV5RVaMVoURDCmrtGKUiqILHN2i-5i_JljzoVYoX7vIJwm3NSuxeBOxgEE4054ydq7FLy10OKBpGmA5dOOOpmzSRP2Hd6NW3vkOH0bhztj-4ibCTvvTPTn2oJLM0GOuLbWT3PrPbrpahvh4XLX6Ot1_7l7J4fj28dueyCa5yqRri2gyFohJWRa8kzKUiva6UKwsqY58I5KqhqZqzbX8-qmyZoGpOIllSVThVijp__eIfjfEWKqehM1WFs78GOsmOCCz3r4gj7_ozr4GAN01RBMX4epYrRalFasuigVf3ivaG8</recordid><startdate>20120206</startdate><enddate>20120206</enddate><creator>Yao, Z. 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L.</creatorcontrib><creatorcontrib>Vogel, M.</creatorcontrib><creatorcontrib>Kumar, A.</creatorcontrib><creatorcontrib>Zhang, W. J.</creatorcontrib><creatorcontrib>Lee, C. S.</creatorcontrib><creatorcontrib>Lee, S. T.</creatorcontrib><creatorcontrib>Jiang, X.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Copper Technical Reference Library</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Applied physics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yao, Z. Q.</au><au>He, B.</au><au>Zhang, L.</au><au>Zhuang, C. Q.</au><au>Ng, T. W.</au><au>Liu, S. L.</au><au>Vogel, M.</au><au>Kumar, A.</au><au>Zhang, W. J.</au><au>Lee, C. S.</au><au>Lee, S. T.</au><au>Jiang, X.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent Cu-O alloying</atitle><jtitle>Applied physics letters</jtitle><date>2012-02-06</date><risdate>2012</risdate><volume>100</volume><issue>6</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><abstract>The electronic band structure and p-type conductivity of CuAlO2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu+ 3d10 with Cu2+ 3d9 orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO2 host. The Cu-O/CuAlO2 alloying films show excellent electronic properties with tunable wide direct bandgaps (∼3.46–3.87 eV); Hall measurements verify the highest hole mobilities (∼11.3–39.5 cm2/Vs) achieved thus far for CuAlO2 thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO2 films were presented, and the devices showed pronounced performance with Ion/Ioff of ∼8.0 × 102 and field effect mobility of 0.97 cm2/Vs.</abstract><doi>10.1063/1.3683499</doi></addata></record> |
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| source | AIP Journals Complete; AIP Digital Archive; Alma/SFX Local Collection |
| subjects | ALLOYING Alloying effects COPPER ALLOYS (40 TO 99.3 CU) Copper base alloys Devices ELECTRICAL CONDUCTIVITY ELECTRONIC PRODUCTS Electronics Energy bands ENGINES Orbitals THIN FILMS VALENCE |
| title | Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent Cu-O alloying |
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