Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent Cu-O alloying

The electronic band structure and p-type conductivity of CuAlO2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu+ 3d10 with Cu2+ 3d9 orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO2 host. The Cu-O/CuAlO2 al...

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Veröffentlicht in:Applied physics letters 2012-02, Vol.100 (6)
Hauptverfasser: Yao, Z. Q., He, B., Zhang, L., Zhuang, C. Q., Ng, T. W., Liu, S. L., Vogel, M., Kumar, A., Zhang, W. J., Lee, C. S., Lee, S. T., Jiang, X.
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Sprache:eng
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Zusammenfassung:The electronic band structure and p-type conductivity of CuAlO2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu+ 3d10 with Cu2+ 3d9 orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO2 host. The Cu-O/CuAlO2 alloying films show excellent electronic properties with tunable wide direct bandgaps (∼3.46–3.87 eV); Hall measurements verify the highest hole mobilities (∼11.3–39.5 cm2/Vs) achieved thus far for CuAlO2 thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO2 films were presented, and the devices showed pronounced performance with Ion/Ioff of ∼8.0 × 102 and field effect mobility of 0.97 cm2/Vs.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3683499