Resistive switching behavior in diamond-like carbon films grown by pulsed laser deposition for resistance switching random access memory application

In this paper, nonvolatile bipolar resistive memory effects were observed in nitrogen doped diamond-like carbon (DLC) thin films prepared by a pulsed laser deposition technique. It is observed that the fabricated Pt/Ti/DLC/Pt structure exhibits good memory performances with an ON/OFF ratio >10, d...

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Veröffentlicht in:	Journal of applied physics 2012-04, Vol.111 (8), p.084501-084501-4
Hauptverfasser:	Peng, Pinggang, Xie, Dan, Yang, Yi, Zang, Yongyuan, Gao, Xili, Zhou, Changjian, Feng, Tingting, Tian, He, Ren, Tianling, Zhang, Xiaozhong
Format:	Artikel
Sprache:	eng
Schlagworte:	Diamond-like carbon films Metal fibers Platinum Pulsed laser deposition Switching Thin films Titanium Voltage
Online-Zugang:	Volltext
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Zusammenfassung:	In this paper, nonvolatile bipolar resistive memory effects were observed in nitrogen doped diamond-like carbon (DLC) thin films prepared by a pulsed laser deposition technique. It is observed that the fabricated Pt/Ti/DLC/Pt structure exhibits good memory performances with an ON/OFF ratio >10, data retention time >10 4 s, and low operation voltage (
ISSN:	0021-8979 1089-7550
DOI:	10.1063/1.3703063