Competing misfit relaxation mechanisms in epitaxial correlated oxides

Strain engineering of functional properties in epitaxial thin films of strongly correlated oxides exhibiting octahedral-framework structures is hindered by the lack of adequate misfit relaxation models. Here we present unreported experimental evidence of a four-stage hierarchical development of octa...

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Veröffentlicht in:Physical review letters 2013-03, Vol.110 (10), p.107206-107206, Article 107206
Hauptverfasser: Sandiumenge, Felip, Santiso, José, Balcells, Lluís, Konstantinovic, Zorica, Roqueta, Jaume, Pomar, Alberto, Espinós, Juan Pedro, Martínez, Benjamín
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Sprache:eng
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Zusammenfassung:Strain engineering of functional properties in epitaxial thin films of strongly correlated oxides exhibiting octahedral-framework structures is hindered by the lack of adequate misfit relaxation models. Here we present unreported experimental evidence of a four-stage hierarchical development of octahedral-framework perturbations resulting from a progressive imbalance between electronic, elastic, and octahedral tilting energies in La(0.7)Sr(0.3)MnO(3) epitaxial thin films grown on SrTiO(3) substrates. Electronic softening of the Mn-O bonds near the substrate leads to the formation of an interfacial layer clamped to the substrate with strongly degraded magnetotransport properties, i.e., the so-called dead layer, while rigid octahedral tilts become relevant at advanced growth stages without significant effects on charge transport and magnetic ordering.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.110.107206