Growth and microstructure of heterogeneous crystal GaSe:InS

An optical quality GaSe:InS single crystal has been grown by modified Bridgman technique using nonstationary temperature distribution for effective melt mixing. The phase composition of the crystal has been verified with XRD and TEM. The chemical composition variation along the crystal has been evaluated with electron probe microanalysis (EPMA), atomic-emission spectrometry with inductively-coupled plasma (ICP-AES) and atomic-absorption spectrometry (AAS). The joint solubility limits in the GaSe:InS system are measured as y In = 0.28 at% and y S = 7 at%. The optical properties of GaSe:InS crystal have been obtained with spectroscopic ellipsometry (SE). A heterogeneous crystal GaSe:InS has been grown and evaluated.