Junction Field Effect on the Retention Time for One-Transistor Floating-Body RAM

One-transistor floating-body random access memory retention time distribution is investigated on silicon-on-insulator UTBOX devices. It is shown that the average retention time can be improved by two to three orders of magnitude by reducing the body-junction electric field. However, the retention ti...

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Veröffentlicht in:	IEEE transactions on electron devices 2012-08, Vol.59 (8), p.2167-2172
Hauptverfasser:	Aoulaiche, M., Nicoletti, T., Mendes Almeida, Luciano, Simoen, E., Veloso, A., Blomme, P., Groeseneken, G., Jurczak, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Current measurement Density Design. Technologies. Operation analysis. Testing Devices Electric field Electric fields Electronics Exact sciences and technology floating body floating-body random access memory (RAM) (FBRAM) Integrated circuits Integrated circuits by function (including memories and processors) Junctions Logic gates one-transistor RAM Random access memory recessed junctions retention Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices silicon on insulator (SOI) Temperature measurement Time measurement Transistors underlap junctions UTBOX
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Beschreibung
Zusammenfassung:	One-transistor floating-body random access memory retention time distribution is investigated on silicon-on-insulator UTBOX devices. It is shown that the average retention time can be improved by two to three orders of magnitude by reducing the body-junction electric field. However, the retention time distribution, which is mainly caused by the generation-recombination center density variation, remains similar.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2012.2200685