Controlled synthesis of SiC nanoparticles from surface silicon contamination

In this article we demonstrate the growth of silicon carbide pyramidal shaped nanoparticles from the carbonate contamination of (001) silicon surface. The growth process involves thermal annealing under ultra high vacuum conditions at temperatures ranging from 1050K to 1150K. The silicon carbide com...

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Veröffentlicht in:	Thin solid films 2013-01, Vol.527, p.133-136
Hauptverfasser:	Borowik, Łukasz, Chevalier, Nicolas, Mariolle, Denis, Martinez, Eugénie, Bertin, François, Chabli, Amal, Barbé, Jean-Charles
Format:	Artikel
Sprache:	eng
Schlagworte:	Auger microscopy Carbonated contamination Condensed matter: structure, mechanical and thermal properties Contamination Cross-disciplinary physics: materials science rheology Density Deposition Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy Monitoring Nanoparticles Nanoscale materials and structures: fabrication and characterization Other topics in nanoscale materials and structures Particle density Physics Scanning Auger microscopy Scanning electron microscopy Silicon Silicon carbide Structure and morphology thickness Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Theory and models of film growth Thin film structure and morphology Ultra high vacuum annealing
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