Controlled synthesis of SiC nanoparticles from surface silicon contamination

In this article we demonstrate the growth of silicon carbide pyramidal shaped nanoparticles from the carbonate contamination of (001) silicon surface. The growth process involves thermal annealing under ultra high vacuum conditions at temperatures ranging from 1050K to 1150K. The silicon carbide composition of the particles is confirmed by scanning Auger microscopy measurements. These particles have sizes ranging from 5nm to 20nm and the same orientation imposed by the underlying crystalline silicon surface. Finally, we show that the density of the nanoparticles can be controlled by monitoring the quantity of carbonated species deposited on top of the silicon surface. ► The surface density of SiC nanodots can be controlled by the surface contamination. ► The shape of the SiC nanodots can be defined by Si crystalline orientations. ► The orientation of the SiC nanodots can be defined by Si crystalline orientation. ► The Si contamination can be controlled by scanning electron microscopy irradiation.