Growth of few-layer graphene on SiC at low temperature with the fluorocarbon plasma pre-etching

With the fluorocarbon plasma pre-etching silicon carbide (SiC), a method to prepare few-layer graphene at lower temperature (950°C) by thermal decomposition of SiC was developed. The graphene phase has been found by the X-ray photoelectron spectroscopy and Raman spectroscopy measurement. The planar...

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Veröffentlicht in:	Thin solid films 2013-01, Vol.527, p.65-68
Hauptverfasser:	Xu, Yijun, Wu, Xuemei, Ye, Chao, Deng, Yanhong, Chen, Tian, Ge, Shuibing
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Atomic force microscopy Carbon Cross-disciplinary physics: materials science rheology Design. Technologies. Operation analysis. Testing Dual frequency-capacitively coupled plasma Electronics Etching and cleaning Exact sciences and technology Fluorocarbons Graphene Integrated circuits Materials science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Physics Physics of gases, plasmas and electric discharges Physics of plasmas and electric discharges Plasma applications Raman spectroscopy Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon carbide Theory and models of film growth Thin films X-rays
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