Growth of few-layer graphene on SiC at low temperature with the fluorocarbon plasma pre-etching

With the fluorocarbon plasma pre-etching silicon carbide (SiC), a method to prepare few-layer graphene at lower temperature (950°C) by thermal decomposition of SiC was developed. The graphene phase has been found by the X-ray photoelectron spectroscopy and Raman spectroscopy measurement. The planar sheet of carbon atoms was also observed by atomic force microscopy. The results demonstrate that few-layer graphene can form on SiC substrate at low temperature. ► We studied a method of growing graphene on SiC at low temperature. ► Fluorocarbon plasma pre-etching becomes a key factor in this method. ► Our graphene shows good quality.