Orthogonal E -Wall and H -Wall Tuning of Distributed Resonators: Using Concurrency for Continuous Ultra-Wideband Frequency Generation

A technique to achieve ultra-wideband continuous frequency generation is introduced. It is based on orthogonal E -wall and H -wall tuning of distributed resonators, in standing-wave-mode configurations. The tuning scheme in fact serves dual purposes for generating concurrent tones, as well as wideba...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2012-08, Vol.60 (8), p.2505-2511
Hauptverfasser: Jooyaie, A., Chang, M.-C F.
Format: Artikel
Sprache:eng
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Zusammenfassung:A technique to achieve ultra-wideband continuous frequency generation is introduced. It is based on orthogonal E -wall and H -wall tuning of distributed resonators, in standing-wave-mode configurations. The tuning scheme in fact serves dual purposes for generating concurrent tones, as well as wideband tuning operation. It is scalable and could be applied to any frequency band, but since it is designed around distributed resonators, it is more desirable for higher frequencies. In comparison with alternative methods, the technique requires less silicon space, lower power consumption, better phase noise, as well as a wider tuning range. A V -band voltage-controlled oscillator, with a continuous tuning range from 58 to 76.2 GHz, designed and validated in 65-nm CMOS technology, in accordance with this technique is illustrated, and a new figure of merit is reported.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2012.2201747