Comparison of the electrical and optical properties of direct current and radio frequency sputtered amorphous indium gallium zinc oxide films

The electrical and optical properties of direct current and radio frequency (RF) sputtered amorphous indium gallium zinc oxide (a-IGZO) films are compared. It is found that the RF sputtered a-IGZO films have better stoichiometry (In:Ga:Zn:O=1:1:1:2.5–3.0), lower electrical conductivity (σ

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Bibliographische Detailangaben
Veröffentlicht in:	Thin solid films 2013-01, Vol.527, p.21-25
Hauptverfasser:	Yao, Jianke, Gong, Li, Xie, Lei, Zhang, Shengdong
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous indium gallium zinc oxide Channels Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Deposition by sputtering Direct current Direct current sputtering Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Fermi level Fermi surfaces Indium Materials science Methods of deposition of films and coatings film growth and epitaxy Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Oxygen vacancy Physics Radio frequencies Radio-frequency sputtering Semiconductors Work function Zinc oxide
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Beschreibung
Zusammenfassung:	The electrical and optical properties of direct current and radio frequency (RF) sputtered amorphous indium gallium zinc oxide (a-IGZO) films are compared. It is found that the RF sputtered a-IGZO films have better stoichiometry (In:Ga:Zn:O=1:1:1:2.5–3.0), lower electrical conductivity (σ
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2012.12.035