Growth mechanism of Pt modified TiO2 thick film

Platinum is widely used to modify TiO2 based gas sensing materials, and the promotion mechanism accompanied by praiseworthy results are discussed deeply. In this work, the growth mechanism of Pt dispersed on TiO2 thick film surface is discussed. The surface state of Pt is studied by XRD, XPS, SEM an...

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Veröffentlicht in:	Sensors and actuators. B, Chemical Chemical, 2013-01, Vol.176, p.723-728
Hauptverfasser:	Zhang, Maolin, Yuan, Zhanheng, Ning, Tao, Song, Jianping, Zheng, Cheng
Format:	Artikel
Sprache:	eng
Schlagworte:	Actuators Defect Dispersion Growth mechanism Lattice vacancies oxidation Platinum Promotion Pt/TiO2 scanning electron microscopy Surface state Thick films Titanium dioxide X-ray diffraction X-ray photoelectron spectroscopy
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Beschreibung
Zusammenfassung:	Platinum is widely used to modify TiO2 based gas sensing materials, and the promotion mechanism accompanied by praiseworthy results are discussed deeply. In this work, the growth mechanism of Pt dispersed on TiO2 thick film surface is discussed. The surface state of Pt is studied by XRD, XPS, SEM and Kröger-Vink defect theory in depth. Results indicate that Pt is not only dispersed on TiO2 thick film surface in metallic state but also occupy the lattice of Ti vacancy and form the oxidation state Ti1−xPtxO2. A simple model is proposed to explain the growth process of Pt and Ti1−xPtxO2.
ISSN:	0925-4005 1873-3077
DOI:	10.1016/j.snb.2012.09.054