Concentration induced damping of gas sensitivity in ultrathin tellurium films

The damping of sensitivity induced by high gas (NO2) concentration in tellurium films was observed for the first time. The phenomenon becomes apparent in ultrathin (less than 40nm) shown by AFM, SEM and XRD analyses to be in amorphous state. Sensitivity of 30nm thickness Te film decreases near linea...

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Veröffentlicht in:	Sensors and actuators. B, Chemical Chemical, 2013-02, Vol.177, p.1128-1133
Hauptverfasser:	Tsiulyanu, D., Mocreac, O.
Format:	Artikel
Sprache:	eng
Schlagworte:	Actuators Atomic force microscopy Catalysis Damping Gas sensitivity Gates Nitrogen dioxide NO2 scanning electron microscopy Sensors Tellurium Ultrathin layers X-ray diffraction
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Zusammenfassung:	The damping of sensitivity induced by high gas (NO2) concentration in tellurium films was observed for the first time. The phenomenon becomes apparent in ultrathin (less than 40nm) shown by AFM, SEM and XRD analyses to be in amorphous state. Sensitivity of 30nm thickness Te film decreases near linearly with concentration increase between 150 and 500ppb of nitrogen dioxide. Results are explained in terms of formation of a nitrogen dioxide catalytic gate in which a molecule adsorbs (and desorbs) without reacting.
ISSN:	0925-4005 1873-3077
DOI:	10.1016/j.snb.2012.12.022