X-Ray Diffractometry and Raman Spectroscopy Investigation of Irradiated Layered III-VI Crystals

The present results of investigations of the influence of irradiation on layered n-InSe, p-InSe, and p-GaSe semiconductors. Two types of irradiation are considered： （1） the bremsstrahlung ＂/-quanta with effective energy of 3MeV and the irradiation dose ranging from 0.14 to 140 kGy and （2） 12 MeV electron irradiation up to the dose ranging from 3.3 to 33 MGy. The crystal structure, lattice parameters, and atom coordination environment were investigated by means of X-ray structure analysis and Raman spectra measurements. It is shown that all samples under investigation have high structural perfection. It is shown that even the maximum dose levels of y-quanta and electrons did not caused qualitative changes in the investigated spectra, which indicates that the influence of the irradiation on the subsystems of vacancies and impurities in InSe and GaSe is insignificant. Possible physical phenomena occurring in the layered crystals subjected to irradiation are described. It is suggested tentatively that the dopant atoms of Cd in p-InSe are the centers for localization of radiation-induced vacancies, whereas in the intentionally undoped crystals, the vacancies are localized in the sublattices of In or Ga. These results enable one to consider layered semiconductors as potential candidates for preparation of radiation-resistant photoconverters or detectors of high-energy particles.