A new approach to free-standing GaN using beta -Ga sub(2)O sub(3) as a substrate

Hexagonal GaN (0001) has been grown by a pseudo-HVPE method on beta -Ga sub(2)O sub(3) (100) using an intermediate low-temperature buffer layer formed by in situNH sub(3) treatment of beta -Ga sub(2)O sub(3) substrate. A simple method for self-separation of bulk GaN from the beta -Ga sub(2)O sub(3) substrate is reported. The structural properties of the GaN and GaN- beta -Ga sub(2)O sub(3) interface were investigated by high-resolution X-ray diffraction and electron microscopy techniques. GaN layers were deposited on beta -Ga sub(2)O sub(3) by using gallium cyanide as a transport agent for gallium and, NH sub(3) as a source of nitrogen. The properties of these layers are compared with those of samples grown on sapphire.