Band alignments in the Cu(In, Ga)(S, Se)2 alloy system determined from deep-level defect energies

Band alignments in the Cu(In, Ga)(S, Se)2 alloy system determined from deep-level defect energies

The composition dependence of defect energies in polycrystalline Cu(In1-xGax)(Se1-ySy)2 chalcopyrite semiconductor thin films is investigated by admittance spectroscopy. Alloying CuInSe2 with S increases the energy of the dominant acceptor from 300 meV to approximately 380 meV in CuIn(Se0.4S0.6)2, w...

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Veröffentlicht in:Applied physics. A, Materials science & processing Materials science & processing, 2001-12, Vol.73 (6), p.769-772
Hauptverfasser: TURCU, M, KÖTSCHAU, I. M, RAU, U
Format: Artikel
Sprache:eng
Schlagworte:
Alloy systems
Alloying
Chalcopyrite
Condensed matter: electronic structure, electrical, magnetic, and optical properties
COPPER GLASS ALLOYS
COPPER INDIUM SELENIDE
COPPER INDIUM SULFIDE
Defects
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Energy use
Exact sciences and technology
Extrapolation
Impurity and defect levels
energy states of adsorbed species
Physics
SEMICONDUCTORS
Surface and interface electron states
THIN FILMS
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Zusammenfassung:The composition dependence of defect energies in polycrystalline Cu(In1-xGax)(Se1-ySy)2 chalcopyrite semiconductor thin films is investigated by admittance spectroscopy. Alloying CuInSe2 with S increases the energy of the dominant acceptor from 300 meV to approximately 380 meV in CuIn(Se0.4S0.6)2, whereas in the alloy system Cu(In1-xGax)Se2, the acceptor energy remains unchanged over the whole composition range 0
ISSN:0947-8396
1432-0630
DOI:10.1007/s003390100992