Structural and electrical characteristics of zirconium oxide layers derived by photo-assisted sol-gel processing

This paper reports the photo-assisted formation of ZrO2 layers derived by sol--gel processing at low temperatures using intense radiation from ultraviolet (UV) excimer lamps. Excellent layer properties can be readily obtained for these sol--gel layers after 5-min exposure to the UV irradiation at around 300 C. Analyses of the as-deposited sol--gel layers by UV/VIS spectrophotometry show that the organic species contained in the layers have been removed to a large extent after 5-min irradiation. This is further confirmed by X-ray photoelectron spectroscopy analyses of the same irradiated layers, which indicate the formation of ZrO2 with little carbon contamination contributed by the organic species and less oxidation of Si at the interface. Electrical measurements of these layers are also reported.