Laser hydriding of crystalline and amorphous silicon

Crystalline and ion-beam-amorphized silicon samples were irradiated with a pulsed nanosecond excimer laser in a pure hydrogen atmosphere. The hydrogen concentration was determined via the H(N,{/content/RLF0UHTGYHFWXK9H/xxlarge945.gif}{/content/RLF0UHTGYH F WXK9H/xxlarge947.gif})C nuclear reaction. In the case of crystalline silicon, hydrogen incorporation into the sample surface was found to be well above the hydrogen solubility limit at thermodynamic equilibrium. The hydrogen depth profiles perfectly matched the damage profiles measured via Rutherford backscattering channeling spectroscopy. For the pre-amorphized silicon samples, the laser treatment resulted in epitaxial recrystallization of the amorphous top layer, but the hydrogen uptake was found to be negligible in that case. The experimental data were compared with the results of thermodynamic simulations of the laser--gas--material interaction.